| PART |
Description |
Maker |
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
| K6F4008R2CFAMILY K6F4008R2C-FF850 |
512K X 8 STANDARD SRAM, 85 ns, PBGA48
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 62WV5128ALL IS62WV5128ALL-70T2 IS62WV5128ALL-70T2I |
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| AS5C4008F-35 AS5C4008F-35_H AS5C4008F-35_LH AS5C40 |
512K x 8 SRAM SRAM MEMORY ARRAY
512K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, LCC-32
512K X 8 STANDARD SRAM, 17 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 35 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 12 ns, CDIP32
512K X 8 STANDARD SRAM, 25 ns, CQCC32
512K X 8 STANDARD SRAM, CDSO32
512K X 8 STANDARD SRAM, 15 ns, CDSO32
512K X 8 STANDARD SRAM, 12 ns, CDFP32
|
Austin Semiconductor, Inc
Micross Components
AUSTIN SEMICONDUCTOR INC
|
| K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C |
512Kx8 bit Low Power CMOS Static RAM
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512K X 8 STANDARD SRAM, 55 ns, PDSO32
512K X 8 STANDARD SRAM, 70 ns, PDSO32
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
http://
|
| W963A6BBN W963A6BBN80I W963A6BBN70 W963A6BBN70E W9 |
Low Power Mobile Products
512K WORD X 16 BIT LOW POWER PSEUDO SRAM
|
WINBOND[Winbond]
Winbond Electronics
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| BS616LV8016DIP55 BS616LV8016FCP55 BS616LV8016FC70 |
Very Low Power CMOS SRAM 512K X 16 bit
|
Brilliance Semiconductor
|
| GLT6400L08SL-85ST GLT6400L08SLI-85ST GLT6400L08 GL |
Ultra Low Power 512k x 8 CMOS SRAM
|
List of Unclassifed Manufacturers
ETC
|
| LY6251216 |
512K X 16-Bit Low Power CMOS SRAM
|
Lyontek
|
